Imec claims new benchmark in RF transistor efficiency and output power for mobile applications. As CEOs across the mobile technology sector seek cutting-edge solutions for 6G implementation, Belgian research powerhouse Imec has achieved a groundbreaking milestone in RF transistor performance.
This breakthrough represents a critical advancement toward integrating GaN technology into mobile devices operating in the 6G FR3 band (7-24GHz).
Revolutionary GaN-on-Si MOSHEMT Technology
Their latest innovation - a GaN-on-silicon MOSHEMT (metal-oxide-semiconductor high-electron-mobility transistor) - has set new industry records for both efficiency and output power in low voltage enhancement-mode devices.
Output Power
27.8 dBm (1 W/mm at 13 GHz)
Power Efficiency
66% PAE (Power-added efficiency)
This transformative development will be showcased at the prestigious 2025 Symposium on VLSI Technology and Circuits in Kyoto, Japan.
Technical Breakthrough Details
The revolutionary GaN-on-Si e-mode MOSHEMT demonstrated unprecedented capabilities, achieving remarkable performance in a single device featuring an innovative eight-finger gate layout.
Device Architecture
- Eight-finger gate layout
- Single device design
- No power combination needed
- High output power capability
Innovation Features
- Specialized gate recess technique
- Advanced InAlN barrier layer
- E-mode operation
- Performance degradation compensation
Record-Breaking Contact Resistance
In a parallel achievement, Imec's research team established another industry milestone by demonstrating a record-breaking low contact resistance of 0.024 Ω•mm, significantly enhancing current flow while minimizing power losses.
Performance Boost
70% Increase - Potential output power density boost
While this advancement was achieved in a separate module, it maintains full compatibility with the e-mode transistor architecture.
"Reducing contact resistance is crucial for pushing output power while keeping efficiency high. Our next step is to integrate this contact module into the e-mode transistor and validate the expected gains in power and efficiency, bringing the device closer to real-world 6G applications."
6G Technology Integration
This breakthrough holds particular significance for CEOs and decision-makers in the mobile technology sector, as it addresses critical challenges in power efficiency and performance that have historically constrained mobile device capabilities.
6G FR3 Band
7-24GHz frequency range
Mobile Integration
Next-generation wireless communications
The achievement represents a crucial stepping stone toward realizing the full potential of 6G technology, promising to enable more powerful, energy-efficient mobile devices.
Industry Impact & Competitive Advantage
The development signals a significant competitive advantage for companies that can successfully integrate this technology into their product roadmaps, potentially reshaping the landscape of mobile device manufacturing and telecommunications infrastructure.
Manufacturing Impact
Reshaping mobile device manufacturing
Infrastructure Evolution
Telecommunications infrastructure transformation
This breakthrough addresses the increasingly demanding requirements of next-generation wireless communications while maintaining energy efficiency.
Future Prospects & Development Roadmap
The next phase of development involves integrating the contact module into the e-mode transistor and validating the expected gains in power and efficiency. This integration will bring the device closer to real-world 6G applications.
According to Imec's comprehensive simulations, incorporating this contact module could potentially boost output power density by an impressive 70 percent, meeting the demanding performance requirements for next-generation 6G user equipment.
Strategic Vision & Market Implications
This breakthrough represents more than just a technological advancement - it signifies a fundamental shift in how mobile devices can operate in the 6G era. The combination of high power output and exceptional efficiency addresses key limitations that have historically constrained mobile device performance.
For CEOs and decision-makers in the mobile technology sector, this development provides a clear roadmap for integrating cutting-edge semiconductor technology into their product strategies. The ability to achieve such high performance in a single device without requiring complex power combination systems offers significant advantages in terms of cost, complexity, and reliability.
The successful commercialization of this technology could establish new industry standards for RF transistor performance, creating opportunities for companies that can effectively leverage these capabilities in their product development cycles.
Imec's revolutionary GaN-on-Si MOSHEMT technology breakthrough. [Photo courtesy of Imec]